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hexfet power mosfet notes through are on page 8 features and benefits features benefits pqfn 5x6 mm applications ? or-ing mosfet for 12v (typical) bus in-rush current ? synchronous mosfet for buck converters ? battery operated dc motor inverter mosfet absolute maximum ratings parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i d @ t c(bottom) = 25c continuous drain current, v gs @ 10v i d @ t c(bottom) = 100c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t a = 25c power dissipation p d @t c(bottom) = 25c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range v w a c max. 35 100 400 20 3028 100 -55 to + 150 3.6 0.029 110 low rdson (<1.85m ) lower conduction losses low thermal resistance to pcb (<1.1c/w) increased power density 100% rg tested increased reliability low profile (<0.9 mm) results in increased power density industry-standard pinout ? multi-vendor compatibility compatible with existing surface mount techniques easier manufacturing rohs compliant containing no lead, no bromide and no halogen environmentally friendlier msl1, industrial qualification increased reliability v ds 30 v r ds(on) max (@v gs = 10v) 1.85 m q g (typical) 37 nc r g (typical) 1.5 i d (@t c(bottom) = 25c) 100 a

! form quantity IRFH5301trpbf pqfn 5mm x 6mm tape and reel 4000 IRFH5301tr2pbf pqfn 5mm x 6mm tape and reel 400 eol notice # 259 orderable part number package type standard pack note downloaded from: http:///

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s d g thermal resistance parameter typ. max. units r jc (bottom) junction-to-case CCC 1.1 r jc (top) junction-to-case CCC 15 c/w r ja junction-to-ambient CCC 35 r ja (<10s) junction-to-ambient CCC 22 static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 30 CCC CCC v ? v dss / ? t j breakdown voltage temp. coefficient CCC 0.02 CCC v/c r ds(on) static drain-to-source on-resistance CCC 1.55 1.85 CCC 2.4 2.9 v gs(th) gate threshold voltage 1.35 1.80 2.35 v ? v gs(th) gate threshold voltage coefficient CCC -6.9 CCC mv/c i dss drain-to-source leakage current CCC CCC 5.0 CCC CCC 150 i gss gate-to-source forward leakage CCC CCC 100 gate-to-source reverse leakage CCC CCC -100 gfs forward transconductance 218 CCC CCC s q g total gate charge CCC 77 CCC nc q g total gate charge CCC 37 56 q gs1 pre-vth gate-to-source charge CCC 9.8 CCC q gs2 post-vth gate-to-source charge CCC 5 CCC q gd gate-to-drain charge CCC 12 CCC q godr gate charge overdrive CCC 10 CCC see fig.6,17 & 18 q sw switch charge (q gs2 + q gd ) C C C1 7C C C q oss output charge CCC 22 CCC nc r g gate resistance CCC 1.5 2.3 t d(on) turn-on delay time CCC 21 CCC t r r i s e t i m e C C C7 8C C C t d(off) turn-off delay time CCC 22 CCC t f f a l l t i m e C C C2 3C C C c iss input capacitance CCC 5114 CCC c oss output capacitance CCC 1017 CCC c rss reverse transfer capacitance CCC 406 CCC avalanche characteristics parameter units e as single pulse avalanche energy mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage CCC CCC 1.0 v t rr reverse recovery time CCC 24 36 ns q rr reverse recovery charge CCC 53 80 nc t on forward turn-on time time is dominated by parasitic inductance mosfet symbol na ns a pf nc v ds = 15v CCC v gs = 20v v gs = -20v CCC CCC 400 CCC CCC 100 conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 50a conditions see fig.15 max. 150 50 ? = 1.0mhz t j = 25c, i f = 50a, v dd = 15v di/dt = 300a/ s t j = 25c, i s = 50a, v gs = 0v showing the integral reverse p-n junction diode. CCC r g =1.0 v ds = 15v, i d = 50a v ds = 24v, v gs = 0v, t j = 125c a i d = 50a i d = 15a v gs = 0v v ds = 15v v ds = 24v, v gs = 0v v ds = v gs , i d = 100 a v gs = 4.5v, i d = 50a v gs = 4.5v typ. m v ds = 16v, v gs = 0v v dd = 15v, v gs = 4.5v v gs = 10v, v ds = 15v, i d = 50a downloaded from: http:///

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fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 6. typical gate charge vs.gate-to-source voltage fig 5. typical capacitance vs.drain-to-source voltage -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 50a v gs = 10v 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 2 04 06 08 01 0 0 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v v ds = 15v i d = 50a 1.5 2 2.5 3 3.5 4 4.5 5 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 15v 60 s pulse width 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.5v 60 s pulse width tj = 150c vgs top 10v 4.50v 4.00v 3.50v 3.25v 3.00v 2.75v bottom 2.50v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 4.50v 4.00v 3.50v 3.25v 3.00v 2.75v bottom 2.50v 60 s pulse width tj = 25c 2.5v downloaded from: http:///
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fig 11. maximum effective transient thermal impedance, junction-to-case (bottom) fig 8. maximum safe operating area fig 9. maximum drain current vs. case (bottom) temperature fig 7. typical source-drain diode forward voltage fig 10. threshold voltage vs. temperature 0.2 0.4 0.6 0.8 1.0 1.2 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.5 1.0 1.5 2.0 2.5 3.0 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 1.0a id = 1.0ma id = 250 a id = 100 a 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 25 50 75 100 125 150 t c , case temperature (c) 0 40 80 120 160 200 i d , d r a i n c u r r e n t ( a ) limited by package 0.10 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) tc = 25c tj = 150c single pulse 100 sec 1msec 10msec downloaded from: http:///
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fig 13. maximum avalanche energy vs. drain current fig 12. on-resistance vs. gate voltage fig 14b. unclamped inductive waveforms fig 14a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v fig 15a. switching time test circuit fig 15b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f
1 0.1 + - 2 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 0 1 2 3 4 5 6 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) i d = 50a t j = 25c t j = 125c 25 50 75 100 125 150 starting t j , junction temperature (c) 0 100 200 300 400 500 600 700 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 9.69a 18.4a bottom 50a downloaded from: http:///

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fig 16.

for n-channel hexfet power mosfets fig 17. gate charge test circuit fig 18. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr ? ? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-appliedvoltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period

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pqfn 5x6 outline "b" package details

http://www.irf.com/technical-info/appnotes/an-1154.pdf note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ pqfn 5x6 outline "b" part marking xxxx xywwx xxxxx international rectifier logo part number (4 or 5 digits) marking code (per marking spec) assembly site code (per scop 200-002) date code pin 1 identifier lot code (eng mode - min last 4 digits of eati#) (prod mode - 4 digits of spn code) downloaded from: http:///
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qualification standards can be found at international rectifiers web site http://www.irf.com/product-info/reliability higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ applicable version of jedec standard at the time of product release.
repetitive rating; pulse width limited by max. junction temperature.
starting t j = 25c, l = 0.119mh, r g = 25 , i as = 50a.
pulse width 400 s; duty cycle 2%. r is measured at t j of approximately 90c. when mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of fr-4 material.
calculated continuous current based on maximum allowable junction temperature. package is limited to 100a by production test capability ms l 1 (per je de c j-s t d-020d ??? ) rohs compliant yes pqfn 5mm x 6mm qualification information ? moisture sensitivity level qualification level industrial ?? (per je dec jes d47f ??? guidelines ) pqfn 5x6 outline "b" tape and reel ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ date comments ? updated ordering information to reflect the end-of-life (eol) of the mini-reel optio n (eol notice #259) ? updated data sheet with new ir corporate template revision history 12/16/2013 downloaded from: http:///

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